Unlocking the potential: a comparative performance & technology analysis of five SiC MOSFETs from Infineon, STMicroelectronics and others
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) have emerged as key components in power electronics, revolutionizing various applications due to their superior performance characteristics.
In this context, and powered by SERMA Technologies, Yole Group reveals the first volume of their new product performance analysis report. In this volume, five 1200V-class SiC discrete MOSFETs (and a reference Si IGBT device) from worldwide players are evaluated under JEDEC standards and compared under the same test conditions.
This first volume evaluates five 1200V-class SiC MOSFETs and a reference Si IGBT under JEDEC standards. The report provides a comprehensive analysis of the static performance of these SiC MOSFETs, comparing key metrics such as on-state resistance, drain-to-source voltage, threshold voltage, and more. Data and graphs are included for various parameters across different temperatures (-55°C, -40°C, 25°C, 150°C, 175°C) and JEDEC standards (JESD 24, JEP 183). Tests were conducted on three Devices under Test (DuT) for each reference, ensuring objective analysis under identical conditions, unlike typical datasheet comparisons.
Cost of the report: 6 990€
NEED MORE INFORMATION OR BY THE REPORT?
Key Features
- Static Performance test Analysis and comparison of various metrics: on-state resistance, threshold voltage, breakdown voltage, leakage currents (gate-source, drain-source)…
- Performance test results for different temperatures: -55°C, -40°C, 25°C, 150°C, 175°C.
- Main Physical Analysis linked to performance metrics. (Package opening, Die cross-section…)
- Performance comparison versus technology & cost
Report objectives
- Provide a performance analysis and comparison of 5 discrete SiC MOSFETs of 1200V-class from worldwide players: Wolfspeed (C3M0075120D), ROHM (SCT3080KLHR), Infineon (AIMW120R080M1), STMicroelectronics (SCTW40N120G2VAG), Anbonsemi (AS1M080120P), and a reference Si IGBT device from Infineon (IKW15N120CS7)
- Provide a comprehensive evaluation of the device’s behavior under steady-state conditions. (The performance analysis focuses on the static performances of the devices. No dynamic test is performed in this volume of the report).
- Conduct tests at different test temperatures (-55°C, -40°C, 25°C, 150°C, 175°C) and in accordance with JEDEC norms and standards
- Compare the measured performance parameters of the tested devices.
- Highlight the merits of the tested device based on the static performance test results.
- Complement datasheet information by this third-party objective comparison realized under identical test conditions.
- Establish “Yole Selection Guide for SiC” beyond datasheet information, to select the most performant device candidates fulfilling multiple performance criteria.
- Establish the performance versus cost roadmap for the SiC MOSFETs.
What’s new?
- New type of product from Yole Group featuring performance test comparison of SiC MOSFETs.
- This third-party objective comparison is realized under identical test conditions which is rarely the case if one tries to compare separately the performance based on datasheets.
Overview / Introduction
- Executive Summary
- Summary of the key results
- Physical, Cost & Performance Analysis Methodology
- Glossary
Technology & Market Overview
Devices Datasheet & Company Profile
- 1200V SiC MOSFET:
- Wolfspeed C3M0075120D
- ROHM SCT3080KLHR
- Infineon AIMW120R080M1
- STMicroelectronics SCTW40N120G2VAG
- Anbonsemi AS1M080120P
- Reference 1200V Si IGBT device
- Infineon IKW15N120CS7
Physical & Cost Analysis:
For each of the devices, a summary of:
- Package View, Opening & Cross-Section
- Die View & Cross Section
- Devices Manufacturing Cost
Performance Analysis
- Test protocol & conditions
- Performance test results for different temperatures (-55°C, -40°C, 25°C, 150°C, 175°C): Data & Graphs of RDS(on)(VGS), RDS(on)(IDS), VDS, VGS(th), VBR(DSS), IDSS, IGSS, QG, IDS(VDS), ISD(VSD)
Comparison
- Figure of Merit « FoM » : FoM (Qg*RDS(on)) vs. RDS(on) & FoM (RDS(on)*Area) vs. RDS(on)
- FoM (Qg*RDS(on)) vs. FoM (RDS(on)*Area)
- FoM (Qg*Rdson) vs. current density vs. cell pitch
- Gate physical parameters impact on performance metrics
- Performance vs cost: FoMs (Qg*RDS(on) & RDS(on)*Area) vs $/A
- VGS(th) and VBR evolution in terms of temperature
Feedback
Related Products
About Yole Group
About SERMA Technologies
COMPARATIVE PERFORMANCE ANALYSIS OF 5 SIC MOSFETS
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) have emerged as key components in power electronics, revolutionizing various applications due to their superior performance characteristics.
In this context, Yole Group, powered by SERMA Technologies, is happy to reveal the first volume of their new product performance analysis report. In this volume, five 1200V-class SiC discrete MOSFETs (and a reference Si IGBT device) from worldwide players are evaluated under JEDEC standards and compared under the same test conditions.
This report delves into the static performance of the selected SiC MOSFETs to gain a holistic understanding of their merits. The comparative analysis involves assessing key metrics such as on-state resistance, drain-to-source voltage, threshold voltage, breakdown voltage, leakage currents, etc., under varying operating conditions. It includes data and graphs of the tested devices for: RDS(on)(VGS), RDS(on)(IDS), VDS, VGS(th), VBR(DSS), IDSS, IGSS, QG, IDS(VDS), ISD(VSD), and more. Performance tests are conducted at various temperatures (-55°C, -40°C, 25°C, 150°C, 175°C) and in accordance with JEDEC norms and standards such as JESD 24 and JEP 183. The test protocol is outlined in the report. Performance tests are carried out on three Devices under Test (DuT) for each reference. This third-party objective analysis is conducted under identical test conditions, which is rarely the case when comparing performance based on information from device datasheets.
Additionally, Yole Group has performed a physical analysis of all devices, providing optical and SEM images along with detailed measurements for package opening and die cross-section. The parameters derived from the physical analysis are compiled to facilitate a comprehensive analysis of their impact on the performance of the devices. The final component cost is provided for each of the devices. Last but not least, the devices are compared based on their “performance versus cost” tradeoff.
What was interesting to see is that some SiC devices may compete in performance, if used in their optimal mode or under specific conditions as identified by our performance test, over various temperature ranges…
- Wolfspeed
- ROHM
- Infineon
- STMicroelectronics
- Anbonsemi
